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2 edition of Computing Moments of Implanted-Ion Range and Energy Distributions. found in the catalog.

Computing Moments of Implanted-Ion Range and Energy Distributions.

Atomic Energy of Canada Limited.

Computing Moments of Implanted-Ion Range and Energy Distributions.

by Atomic Energy of Canada Limited.

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  • 16 Currently reading

Published by s.n in S.l .
Written in English


Edition Notes

1

SeriesAtomic Energy of Canada Limited. AECL -- 5536
ContributionsWinterbon, K.B.
ID Numbers
Open LibraryOL21970809M

Arsenic Implanted and Implanted-Diffused Profiles in Silicon Using Secondary Ion Emission and Differential Resistance.- The Effect of Ion Implantation on the Lattice Location of Arsenic in Arsenic-Doped Si.- Concentration Profiles of Arsenic Implanted in Silicon.- Energy Dependence and Annealing Behaviour of Boron Range Distributions in Silicon.- Range profiles of and keV 30Si+ ions implanted into Si() at room temperature with doses from 2 × to 1 × ions cm-2, and of 2 × keV 30Si+ ions cm-2 in Si(

On the other hand, systematic range studies performed in C, B, Be, SiC and polymer target films have shown that whenever medium-heavy ions are implanted in an energy range of 10 keV– MeV the   the ion implantation process is accurately simulated by computing a large number N of individual ion trajectories through a semiconductor material. The trajectory of each implanted ion is determined by the interactions with the atoms and electrons of the target material. The nal position of an implanted ion is reached where it has lost its

The U.S. Department of Energy's Office of Scientific and Technical Information   Ion energy deposition. Energy was deposited in the model systems by irradiation with 3 MeV Au 2+ and MeV Ni + ions. The irradiations were


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Computing Moments of Implanted-Ion Range and Energy Distributions by Atomic Energy of Canada Limited. Download PDF EPUB FB2

Ranges and moments of depth distributions of boron and phosphorus implanted into silicon in the energy range MeV with an Eaton NV-GSD/VHE implanter. of ion-implanted Si, enables more effective dopant activation and at lower temperatures than required for rapid thermal annealing (RTA).

The neutron activation analysis was used to   The most frequently investi- gated range parameters are the first two moments, the mean range, #, and the straggling, o, which from a mathematical standpoint specify where the distribu- tion is, and how broad it is.

K.B. Winterbon, Computing moments of implanted-ion range and energy distributions, AECL (Chalk River, Ontario, ). [7   The effects of H +, C +, N +, Ne +, Al +, P +, Cl +, Ar +, Ga +, As +, Kr +, Sb +, Xe +, Au + and Tl + ion implantation on the anodic oxidation of Si have been investigated as a function of dose and energy, in the as-implanted stage and after heat treatment at temperatures up to °C.

It is speculated that the location, in the formed oxide, of agglomerates containing the dopant, and the The computational procedure of Brice [8] is extended to permit computation of third central moments for the projected range distribution, using the LSS formulation of the range problem.

Third central moments for B, P, As, and Sb in Si are computed for, initial energy in the range 20 keV to 1 MeV, and the results are compared with available   The effects of high dose, high energy As + implantation on the anodic oxidation of silicon have been studied as a function of dose and ion energy in the as-implanted stage and in several stages of thermal annealing.

For implants with doses ranging from 5 × 10 16 to 1 × 10 17 ions cm 2 the effect of impurity concentration on the anodic oxidation-rate was found to be of importance: the larger Projected range and damage distributions in ion‐implanted Al, Si, Al2O3, and GaAs J.

Appl. Phys. 58, (); / This article is copyrighted as indicated in the ://   Ion implantation range and energy deposition distributions, Volume 1, High incident ion energies, D.

Brice [IFI/Plenum, ] Ion implantation range and energy deposition distributions, Volume 2, Low incident ion energies, K. Winterbon [IFI/Plenum, ] Projected range statistics: semiconductors and related materials,  Web view.

The HDR depth distributions in silicon implanted with krypton ions of various energies to a dose of 10" ions cm-z: x, keV; Q, keV; keV; A, keV.

The derived distributions were analysed by the method of moments and the results were compared with the first four moments of the ion and damage distributions calculated :// Theory of the Spatial Distributions of Ion Range and Energy Deposition.

David K. Brice. Computation of Third Central Moments for Projected Range Distributions of Common Ion-Implanted Dopants in Silicon. Mylroie, J. Gibbons. Pages About this :// During the years since the first conference in this series was held at Thousand Oaks, California, inion implantation has been an expanding and exciting research area.

The advances in this field were so rapid that a second conference convened at Garmisch­ Partenkirchen, Germany, in  › Physics › Condensed Matter Physics.

In addition, empirical formulas for the first four statistical moments (range, straggle, skewness, and kurtosis) of the implant depth distributions of N and P ion implants are developed in the energy range of 50 keV to 4 :// @article{osti_, title = {On the Use of SRIM for Computing Radiation Damage Exposure}, author = {Stoller, Roger E.

and Toloczko, Mychailo B. and Was, Gary S. and Certain, Alicia G. and Dwaraknath, S. and Garner, Frank A.}, abstractNote = {The SRIM (formerly TRIM) Monte Carlo simulation code is widely used to compute a number of parameters relevant to ion beam implantation and ion beam   Depth distributions are shown for sulfur implants into GaAs at energies from 40 to keV and implant fluences from 4×10 1 2 to 4×10 1 6 cm − four Pearson IV moments, including range and range straggle, are tabulated and plotted versus ion energy for these :// This book is composed of six chapters and begins with a discussion on the factors affecting the electrical characteristics of implanted layers in silicon and germanium, such as range distributions of dopant species, lattice disorder, and location of dopant species on substitutional and interstitial sites in the ://   Depth distributions, range‐energy curves, and the Pearson IV moments are given for Cr implantation into crystalline GaAs and Si as a function of ion energy from 40 to keV at 4×10 13 cm −2 fluence, and as a function of ion fluence from 4×10 12 to 2×10 16 cm −2 at ‐keV ion energy.

The nature of the redistribution of these Cr profiles upon annealing at °C for 20 min in both   The Monte Carlo computer program trim is used to calculate the projected range, the standard deviation, the skewness, and the kurtosis of implanted boron ion distributions in silicon, silicon dioxide, molybdenum disilicide, tantalum disilicide, titanium disilicide, and tungsten disilicide.

The boron implantation energy ranges from 10 to ://   Depth distributions for He implanted in Si and GaAs measured by secondary ion mass spectrometry (SIMS) are reported as a function of ion energy from 20 to keV at 10 1 6 cm − 2 fluence.

The range parameters and Pearson IV moments are determined and tabulated. The ranges of ‐keV He ions in both Si and GaAs are about μm but the width of the profiles is greater for   We report unannealed and annealed depth distributions for Hg implanted into Si at energies of – keV and fluences from 10 1 4 to 10 1 6 cm − parameters and Pearson IV moments are determined; projected range and range straggle are about 40% greater than Lindhard, Scharff, and Schio/tt ://   Range profiles for keV As' implantation into Ti/Si.

As'll MEV~ cm 2l--Si 10 z X10'9 z 0 10,a z w U z 0 0 1Q DEPTH (A) Figure 3. Range profiles for l MeV As' implantation into Si. Experimental data from ref mulae`.

The agreement of the range distributions calculated by BOTE with the histograms simulated by TRIM is :// The moments of SIMS and simulated profiles are calculated and compared for the exact range in MeV energy.

SRIM, DUPEX, ICECREM, and TSUPREM4 simulation programs are. Based on the KRAL equations (Ashworth et al., J.

Phys. D 24, –), which take into account second-order energy loss moments, projected ranges and range moments of ions in mono-atomic S. W. Mylroie and J. F. Gibbons, “Computation of Third Central Moments for Projected Range Distributions of Common Ion-Implanted Dopants in Silicon,” Third International Conf.

on Ion Implantation, Yorktown Heights, New York (December ). Google ScholarOptical Absorption, and Cathodoluminescence in Ion Implanted CdS -- Annealing Studies of Broad-Band Luminescence from Ion-Implanted ZnSe -- Thermoluminescence and Related Experiments on Br-Implanted ZnS Single Crystals -- Lattice Disorder in Br, CI, and F Implanted CdS: Channeling Study -- Lattice Disorder in Br, CI, and F Implanted CdS